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    National Tsing Hua University Institutional Repository > 研究中心 > 奈微與材料科技中心 > 期刊論文 >  Deposition of mesoporous silicon carbide thin films from (Me3Si)(4)Sn: Tin nanoparticles as in situ generated templates


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/61645


    Title: Deposition of mesoporous silicon carbide thin films from (Me3Si)(4)Sn: Tin nanoparticles as in situ generated templates
    Authors: Wang, Chia-Hsin;Shen, Wen-Yih;Sheng, Pei-Sun;Lee, Chi-Young;Chiu, Hsin-Tien
    教師: 李紫原
    Date: 2007
    Publisher: American Chemical Society
    Relation: CHEMISTRY OF MATERIALS,Volume: 19,Issue: 22,Pages: 5250-5255,Published: OCT 30 2007
    Keywords: CHEMICAL-VAPOR-DEPOSITION
    SINGLE-SOURCE PRECURSOR
    MOLECULAR-BEAM EPITAXY
    Abstract: With use of Sn(SiMe3)(4) as the precursor, amorphous SiC1+x thin films with Sri nanoparticles embedded were grown on Si substrates at 923 K by low-pressure chemical vapor deposition. After treatment under hydrogen plasma at 923 K, the Sri nanoparticles in the films were removed by an HF solution and by evaporation at 1423 K. Following the removal of Sri, high-temperature treatments at 1273-1423 K converted the amorphous thin films into mesoporous semiconducting beta-SiC thin films with pore sizes 10-100 nm.
    URI: http://pubs.acs.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/61645
    Appears in Collections:[奈微與材料科技中心] 期刊論文

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