National Tsing Hua University Institutional Repository:Enhanced electrochemical properties of arrayed CNx nanotubes directly grown on Ti-buffered silicon substrates
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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  Enhanced electrochemical properties of arrayed CNx nanotubes directly grown on Ti-buffered silicon substrates


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    題名: Enhanced electrochemical properties of arrayed CNx nanotubes directly grown on Ti-buffered silicon substrates
    作者: Fang WC;Sun CL;Huang JH;Chen LC;Chyan O;Chen KH;Papakonstantinou P
    教師: 黃金花
    日期: 2006
    出版者: Electrochemical Society
    關聯: ELECTROCHEMICAL AND SOLID STATE LETTERS,Volume: 9,Issue: 3,Pages: A175-A178,Published: 2006
    關鍵詞: CARBON NANOTUBES
    摘要: The effects of a Ti buffer layer on structural and electrochemical properties of arrayed nitrogen-containing carbon nanotubes (CNx NTs) directly grown on Si substrates have been investigated. Cyclic voltammograms using Fe(CN)(6)(3-)/Fe(CN)(6)(4-) as redox couple were measured to study the electrochemical activities of CNx NTs. The highest peak current density was achieved at an optimal Ti thickness of 20 nm owing to the good conductivity of TiSi2 and high number density of NTs. Therefore, we have demonstrated the direct growth of aligned NTs on Ti- buffered Si with improved electrochemical activity that is believed to be suitable for advanced microsystem applications. (c) 2006 The Electrochemical Society.
    URI: http://www.electrochem.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/62278
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