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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  Effect of Ti interlayer on the growth of carbon nanotubes on Si by microwave-heated chemical vapor deposition


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/62281


    Title: Effect of Ti interlayer on the growth of carbon nanotubes on Si by microwave-heated chemical vapor deposition
    Authors: Huang JH;Chen YS;Chuang CC;Wong YM;Kang WR
    教師: 黃金花
    Date: 2005
    Publisher: American Vacuum Society
    Relation: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,Volume: 23,Issue: 2,Pages: 805-808,Published: MAR-APR 2005
    Keywords: FIELD-EMISSION
    Abstract: The effect of Ti layer on the growth of aligned carbon nanotubes on Si using Pd, Ni, or Co as catalysts by microwave-heated chemical vapor deposition was systematically studied. For all growths, a thin Ti layer of 16 or 22 nm, a thin catalyst layer of 6-30 nm, a growth time of 15-45 min, and a growth temperature of 590 or 690 degrees C were varying deposition parameters. It was found that the growths with Ni or Co as the catalyst on Ti-coated Si could always produce well-aligned carbon nanotubes. However, a carbonaceouslike film was found to exist on the top of nanotubes in most Ni-catalyzed carbon nanotube films. In contrast, carbon nanotubes grown from Pd catalyst were generally not aligned. Furthermore, the nanotubes grown from Pd at 590 degrees C are crooked or twist, and very short. (c) 2005 American Vacuum Society.
    URI: http://www.avs.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/62281
    Appears in Collections:[材料科學工程學系] 期刊論文

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