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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  Effects of doping type and concentration on precipitation of nanometer arsenic clusters in low-temperature-grown GaAs

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/62284

    Title: Effects of doping type and concentration on precipitation of nanometer arsenic clusters in low-temperature-grown GaAs
    Authors: W. N. Lee;Y. F. Chen;J. H. Huang;X. J. Guo;C. T. Kuo
    教師: 黃金花
    Date: 2005
    Publisher: American Vacuum Society
    Relation: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures,Issue Date: Nov 2005,Volume: 23 Issue:6,On page(s): 2514 - 2517
    Keywords: doping type
    nanometer arsenic clusters
    low-temperature-grown GaAs
    Abstract: In this study, the effects of doping type and concentration on arsenic precipitation in low-temperature-grown GaAs upon postgrowth annealing at 600, 700, and 800 °C were investigated. Three undoped/Si-doped/undoped (i-n-i) regions and three undoped/Be-doped/undoped (i-p-i) regions were grown by low-temperature molecular beam epitaxy. The results show that arsenic precipitation is dependent on doping type and doping concentration. Arsenic depletion was observed in all Be-doped layers for all annealing temperatures. However, a “dual” arsenic precipitation behavior was observed in Si-doped layers: As accumulates in [Si]=2×1018 cm-3 doped layers, while it depletes in [Si]=2×1016 and 2×1017 cm-3 doped layers. We attribute this “dual” As precipitation phenomenon in Si-doped layers to the different depletion depths.
    URI: http://www.avs.org/
    Appears in Collections:[材料科學工程學系] 期刊論文

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