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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  Fabrication and field emission characteristics of high density carbon nanotube microarrays

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/62286

    Title: Fabrication and field emission characteristics of high density carbon nanotube microarrays
    Authors: C.-C. Chuang;J. H. Huang;C. C. Lee;Y. Y. Chang
    教師: 黃金花
    Date: 2005
    Publisher: American Vacuum Society
    Relation: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures,Issue Date: Mar 2005,Volume: 23 Issue: 2,On page(s): 772 - 775
    Keywords: Fabrication and field emission characteristics
    high density carbon nanotube microarrays
    Abstract: High density carbon nanotube field emitter arrays (CNT-FEAs) with various multilayer cathode structures have been fabricated on Si utilizing conventional integrated circuit technology and microwave-heated chemical vapor deposition process. The CNT-FEAs were configured as triode emitters with 1-μm thermal SiO2 as the insulator and 400-nm Cr as the gate, and compared per the resulting morphologies, Raman spectra, and field emission characteristics. It was found that the Ni/Cr/Si cathode structure is the best fit for selective growth of CNTs in gate holes. In particular, a CNT-FEA fabricated on Ni(60 nm)/Cr(80 nm)/Si cathode structure has yielded excellent emission characteristics, with low turn-on and threshold fields, being, respectively, at 0.45 and 3.7 V/μm. This triode CNT device also exhibited a uniform image of high brightness(∼1800 cd/m2) on a green-phosphor coated idium-tin-oxide glass and a relatively stable emission current, being tested at a constant anode voltage of 1000 and 900 V, respectively.
    URI: http://www.avs.org/
    Appears in Collections:[材料科學工程學系] 期刊論文

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