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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  Strain-enhanced arsenic precipitation in GaAs-based quantum-well structures grown by low-temperature molecular beam epitaxy

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/62287

    Title: Strain-enhanced arsenic precipitation in GaAs-based quantum-well structures grown by low-temperature molecular beam epitaxy
    Authors: J H Huang;W N Lee;X J Kuo;Y O Su
    教師: 黃金花
    Date: 2006
    Relation: 第一屆台灣分子束磊晶科技研討會,中山大學,國內會議,2004年04月
    Keywords: GaAs-based quantum-well structures
    low-temperature molecular beam epitaxy
    Abstract: The precipitation of arsenic in InGaAs/GaAs and GaAs/AlGaAs multiple-quantum-well (MQW) structures grown by molecular-beam epitaxy at 230 °C has been studied by transmission electron microscopy. For InGaAs/GaAs MQWs with strained InGaAs wells, upon annealing at 500 and 600 °C, arsenic precipitates tend to be completely confined in InGaAs wells near the InGaAs/GaAs interfaces, resulting in dual two-dimensional planes of precipitates in each InGaAs well. In contrast, this strong confinement of precipitates does not exist in InGaAs/GaAs MQWs with partially or totally strain-relieved InGaAs wells and in unstrained AlGaAs/GaAs MQWs. The present results suggest that the As precipitation process in strained GaAs-based MQWs is not only driven by the bond strength in different materials, but also by the lattice-mismatch-induced strain.
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/62287
    Appears in Collections:[材料科學工程學系] 期刊論文

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