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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  Diffusion barrier properties of AlMoNbSiTaTiVZr high-entropy alloy layer between copper and silicon


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/62296


    Title: Diffusion barrier properties of AlMoNbSiTaTiVZr high-entropy alloy layer between copper and silicon
    Authors: Ming-Hung Tsai;Jien-Wei Yeh;Jon-Yiew Gan
    教師: 葉均蔚
    Date: 2006
    Publisher: Elsevier
    Relation: Thin Solid Films,Volume 516,Issue 16,30 June 2008,Pages 5527-5530
    Keywords: Diffusion barrier
    AlMoNbSiTaTiVZr
    copper
    silicon
    Abstract: The application of an AlMoNbSiTaTiVZr high-entropy alloy film as diffusion barrier for copper metallization has been investigated. The AlMoNbSiTaTiVZr and copper layers are deposited sequentially, without breaking vacuum, onto silicon substrates by DC magnetron sputtering. The AlMoNbSiTaTiVZr films are found to possess a stable amorphous structure due to their high-entropy and limited diffusion kinetics. The AlMoNbSiTaTiVZr high entropy alloy film is determined to prevent copper–silicide formation up to 700 °C for 30 min. Thus, HEAs appear to have potential use as effective diffusion barriers for copper metallization.
    URI: http://www.elsevier.com/wps/find/homepage.cws_home
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/62296
    Appears in Collections:[材料科學工程學系] 期刊論文

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