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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  First-principles analysis of interfacial nanoscaled oxide layers of bonded N- and P-type GaAs wafers


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/62297


    Title: First-principles analysis of interfacial nanoscaled oxide layers of bonded N- and P-type GaAs wafers
    Authors: Hao, Ouyanga;Chiou, Hsiao-Hao;Wu, YewChung Sermon;Cheng, Ji-Hao;Wen, Ouyang
    教師: 歐陽浩
    Date: 2007
    Publisher: American Institute of Physics
    Relation: JOURNAL OF APPLIED PHYSICS,American Institute of Physics,Volume: 102,Issue: 1,Article Number: 013710,Published: JUL 1 2007
    Keywords: MOLECULAR-DYNAMICS
    TEMPERATURE
    SEMICONDUCTORS
    STABILITY
    Abstract: First-principles analysis is applied in relating microstructures with properties of interfacial nanoscaled oxide layers of bonded N- and P-type GaAs wafers. Using high-resolution transmission electron microscope results, the detailed atomic arrangements of materials specimen can be obtained and fed into the first-principles calculations. Therefore, the corresponding electronic structure and associated property can be reliably derived to identify responsible microstructural features. The electrical performance is found to be closely related to the variation of nanosized interface morphology and types of wafers.
    URI: http://www.aip.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/62297
    Appears in Collections:[材料科學工程學系] 期刊論文

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