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    National Tsing Hua University Institutional Repository > 工學院  > 材料科學工程學系 > 期刊論文 >  Nanoscaled interfacial oxide layers of bonded n- and p-type GaAs wafers


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/62300


    Title: Nanoscaled interfacial oxide layers of bonded n- and p-type GaAs wafers
    Authors: Hao Ouyang;YewChung Sermon Wu;Ji-Hao Cheng;Cheng-Lun Lu;Shan-Haw Chiou;Wen Ouyang
    教師: 歐陽浩
    Date: 2006
    Publisher: American Institute of Physics
    Relation: APPLIED PHYSICS LETTERS,American Institute of Physics,Volume: 88,Issue: 17,Article Number: 172104,Published: APR 24 2006
    Keywords: Nanoscaled interfacial oxide layers
    bonded n- and p-type
    GaAs wafers
    Abstract: This work examined in detail the electrical characteristics and microstructures of in- and antiphase bonded interfaces for both n- and p-type GaAs wafers treated at 500 and 600 °C, respectively. The n-GaAs wafers did not bond directly to itself but instead via an amorphous oxide layer at 500 °C. These temperatures are lower than most other works. The nonlinear behavior of the current versus the voltage is related to the potential barrier formed at the continuous oxide interface. Both experimental observation and first-principles calculations confirm the existence of this barrier. The higher interface energy for the antiphase bonding tends to stabilize the interfacial oxide layer. The evolution of interfacial layers occurred much faster for the p-type wafers than for n-type wafers. Electrical performance was found to be closely related to the variation of nanosized interface morphology.
    URI: http://www.aip.org/
    http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/62300
    Appears in Collections:[材料科學工程學系] 期刊論文

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