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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 資訊工程學系 > 會議論文  >  Technology of electroplating copper with low-K material a-C:F for 0.15 um damascene interconnection

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/66883

    Title: Technology of electroplating copper with low-K material a-C:F for 0.15 um damascene interconnection
    Authors: Shieh, Jia-Min;Suen, Shich-Chang;Lin, Kuen-Chaung;Chang, Shih-Chieh;Dai, Bau-Tong;Chen, Chia-Fu;Feng, Ming-Shiann
    教師: 張世杰
    Date: 2000
    Publisher: International Society for Optical Engineering
    Relation: Proc. SPIE,Vol. 4181,335 ,2000
    Keywords: Amorphous films
    Thermodynamic stability
    Plasma enhanced chemical vapor deposition
    Optical interconnects
    Integrated circuit manufacture
    Abstract: In our work, fluorinated amorphous carbon films (a-C:F) was deposited by PECVD. The amorphous carbon films (a-C:F) with low dielectric constant (K to approximately 2.3), thermal stability (higher than 400 °C) and acceptable adhesion to cap-layer such as SiOF was obtained by optimum of content ration between carbon with fluorine and adding few SiH4 for improvement of adhesion. The etching profile with high aspect ratio and etching selection ration more than 50 (a-C:F/SiOF) were obtained by etching gas of N2+O2. Furthermore, we demonstrated the technology of electroplating copper in trenches or vias as small as 0.15 μm, 6:1 AR. The wetting agent system was consisted of mainly two molecular weights polyethylene glycols (PEG). The small molecular weight PEG (200) with better diffusion ability for reducing the surface tension and the larger PEG (2000) enhancing grain growth control was proposed for the first time to wet the inner portion of the sub-150 nm damascene feature. The leveling agent system was mainly heterocyclic compound contained N, S atoms offering sufficient activation over-potential and selective inhibition gradient.
    URI: http://spie.org/
    Appears in Collections:[資訊工程學系] 會議論文

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