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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  1.3 to 1.5 μm range emission from InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68058


    Title: 1.3 to 1.5 μm range emission from InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
    Authors: Hsieh, T.-P.;Yeh, N.-T.;Chiu, P.-C.;Huang, K.-F.;Ho, W.-C.;Wu, M.-C.;Chyi, J.-I.
    教師: 吳孟奇
    Date: 2003
    Publisher: Institute of Electrical and Electronics Engineers (IEEE)
    Relation: International Conference on Indium Phosphide and Related Materials, Santa Barbara, CA, USA, 12-16 May 2003
    Keywords: gallium arsenide
    III-V semiconductors
    indium compounds
    internal stresses
    photoluminescence
    semiconductor quantum dots
    Abstract: In this paper, we demonstrated the long wavelength light emission from InAs quantum dots (QDs) directly capped with GaAs or covered with InGaAs strain reducing layer (SRL) grown by metalorganic chemical vapor deposition (MOCVD). These long wavelength QDs are grown by interrupted growth method with AsH3 as V group precursors. 1.3 μm light emission is observed as the QD directly capped with GaAs. By inserting 6 nm In0.25Ga0.75As, longer emission wavelength of 1.49 μm is observed for the InAs quantum dots
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68058
    Appears in Collections:[電機工程學系] 會議論文

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