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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  Influences of silicon doping of InAs quantum dot layers on optical characteristics of InAs/GaAs quantum dot infrared photodetector(Conference)


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68062


    Title: Influences of silicon doping of InAs quantum dot layers on optical characteristics of InAs/GaAs quantum dot infrared photodetector(Conference)
    Authors: Huang, Chun-Yuan;Ou, Tzu-Min;Chou, Shu-Ting;Tsai, Cheng-Shuan;Wu, Meng-Chyi;Lin, Shih-Yen;Chi, Jim-Yong;Hsu, Bang-Yu;Chi, C.C.
    教師: 吳孟奇
    Date: 2005
    Publisher: Elsevier
    Relation: The Third International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium J - III- V Semiconductors for Microelectronic and Optoelectronic Applications ICMAT 2005
    Keywords: Semiconductor quantum dots
    Semiconductor doping
    Semiconducting silicon
    Semiconducting indium compounds
    Semiconducting gallium arsenide
    Optical properties
    Photoluminescence
    Atomic force microscopy
    Molecular beam epitaxy
    Abstract: We have investigated the effects of silicon doping concentration within thirty-period self-assembled quantum dot (QD) layers on quantum dot infrared photodetectors (QDIPs). The lens-shaped quantum dots with the dot density of 1 × 1011 cm- 2 were observed by atomic force microscope (AFM). From the high ratio of photoluminescence (PL) peak intensities from dot layer to that from wetting layer, we have concluded that high dot density caused the short diffusion length for carriers to be easily captured by QDs. Moreover, the Si-doped samples exhibited the multi-state transitions within the quantum dots, which were different to the single level transition of undoped sample. Besides, the dominant PL peaks of Si-doped samples were red-shifted by about 25 meV compared to that of the undoped sample. It should result from the dopant-induced lowest transition state and therefore, the energy difference should be equal to the binding energy of Si in InAs QDs. © 2006 Elsevier B.V. All rights reserved.
    Relation Link: http://www.elsevier.com/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68062
    Appears in Collections:[電機工程學系] 會議論文

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