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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  The 1/f noise behavior of HV-LDMOSFET before and after hot-carrier stress

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68126

    Title: The 1/f noise behavior of HV-LDMOSFET before and after hot-carrier stress
    Authors: S. H. Chen;J. Gong;M. C. Wu;H. C. Lee;L. L. Lee
    教師: 吳孟奇
    Date: 2003
    Publisher: Institute of Electrical and Electronics Engineers (IEEE)
    Relation: Proc. EDMS, 2003, Pages 77-80
    Keywords: HV-LDMOSFET
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68126
    Appears in Collections:[電機工程學系] 會議論文

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