National Tsing Hua University Institutional Repository:The improvement of GaN epitaxial layers quality by use of separate-flow reactor
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    NTHUR > College of Electrical Engineering and Computer Science > Department of Electrical Engineering > EE Conference Papers >  The improvement of GaN epitaxial layers quality by use of separate-flow reactor


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68136


    Title: The improvement of GaN epitaxial layers quality by use of separate-flow reactor
    Authors: C. C. Yang;G. C. Chi;C. K. Huang;M. C. Wu
    Teacher: 吳孟奇
    Date: 1998
    Publisher: Springer Verlag
    Relation: Proceedings of the 1998 International Photonics Conference, T-S1-B2, Taipei, Taiwan, Dec. 15-18, 1998, Pages 374-376
    Keywords: GaN
    separate-flow
    Relation Link: http://www.springerlink.com/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68136
    Appears in Collections:[Department of Electrical Engineering] EE Conference Papers

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