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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  Reliable extraction of interface states from charge pumping method in ultra-thin gate oxide MOSFET's


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68593


    Title: Reliable extraction of interface states from charge pumping method in ultra-thin gate oxide MOSFET's
    Authors: Lai, H.C.;Zous, N.K.;Tsai, W.J.;Lu, T.C.;Wang, Tahui;King, Y.C.;Pan, Sam
    教師: 金雅琴
    Date: 2003
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: IEEE International Conference on Microelectronic Test Structures, Monterey, CA, United states, 17-20 Mar. 2003, Pages 99-102
    Keywords: Carrier concentration
    CMOS integrated circuits
    Leakage currents
    Substrates
    Abstract: The accuracy and validity of charge pumping (CP) method is questionable in ultra-thin gate oxide MOSFET's due to the increase of the direct tunneling currents at low gate biases. A gate pulsing window for the CP technique is proposed to reduce the influence of this parasitic leakage current effect. Within the window, the CP method is still an excellent tool to measure the average interface trap density. Moreover, the range of this window strongly depends on the gate oxide thickness, the channel length and the gate pulsing frequency.
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68593
    Appears in Collections:[電機工程學系] 會議論文

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