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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  Low leakage AlGaN/GaN HEMTs with a high On/Off current ratio

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68780

    Title: Low leakage AlGaN/GaN HEMTs with a high On/Off current ratio
    Authors: Y. Lin;Y. Lian;S. Hsu;T. Lee
    教師: 徐碩鴻
    Date: 2009
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: 2009 International Conference on Solid State Devices and Materials (SSDM), Miyagi, Japan, Oct. 7-9, 2009
    Keywords: AlGaN/GaN
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68780
    Appears in Collections:[電機工程學系] 會議論文

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