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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  AlGaN/GaN and AlN/GaN Heterostructure Devices: A Possible Device Technology for High RF Power Wireless Transmission


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68790


    Title: AlGaN/GaN and AlN/GaN Heterostructure Devices: A Possible Device Technology for High RF Power Wireless Transmission
    Authors: D. Pavlidis;S. M. Hubbard;S. Hsu;S. Seo
    教師: 徐碩鴻
    Date: 2003
    Publisher: Japan-United States Joint Workshop on Space Solar Power System
    Relation: 2003 Japan-United States Joint Workshop on Space Solar Power System (JUSPS'03), Kyoto, Japan, July 3-4, 2003
    Keywords: AlGaN/GaN
    AlN/GaN
    Heterostructure
    RF
    Wireless Transmission
    Relation Link: http://www.kurasc.kyoto-u.ac.jp/jusps/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68790
    Appears in Collections:[電機工程學系] 會議論文

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