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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  Gate- and drain- noise characteristics of AlGaN/GaN HEMTs and study of their origins


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68792


    Title: Gate- and drain- noise characteristics of AlGaN/GaN HEMTs and study of their origins
    Authors: S. Hsu;D. Pavlidis;J. S. Moon;M. Micovic;D. Wong;T. Hussain
    教師: 徐碩鴻
    Date: 2002
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: proceeding of 26th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe (WOCSDICE), 2002
    Keywords: AlGaN/GaN
    HEMTs
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68792
    Appears in Collections:[電機工程學系] 會議論文

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