A 0.29V embedded NAND-ROM in 90nm CMOS for ultra-low-voltage applications

doi:10.1109/ISSCC.2010.5433914

National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文 > A 0.29V embedded NAND-ROM in 90nm CMOS for ultra-low-voltage applications

Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68866

Title:	A 0.29V embedded NAND-ROM in 90nm CMOS for ultra-low-voltage applications
Authors:	M.-F. Chang;S.-M. Yang;C.-W. Liang;C.-C. Chiang;P.-F. Chiu;K.-F. Lin;Y.-H. Chu;W.-C. Wu;H. Yamauchi
教師:	張孟凡
Date:	2010
Publisher:	Institute of Electrical and Electronics Engineers
Relation:	Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International, San Francisco, CA, USA, 7-11 Feb. 2010, Pages 266-267
Keywords:	NAND-ROM CMOS ultra-low-voltage
Abstract:	A 90 nm 256 Kb NAND-ROM using read-1 noise elimination and read-0 sensing-margin-expanding schemes is functional at 0.29 V and 3 MHz with 100% code-coverage and 5% area overhead. This work reduces the delay-per-BL-length, energy-per-bit at VDDmin, and VDDmin-delay-product by 3000Ã, 4Ã and 3700Ã, respectively, compared to previous low-voltage ROMs.
Relation Link:	http://www.ieee.org/
URI:	http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68866
Appears in Collections:	[電機工程學系] 會議論文

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