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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  Analysis of gate tunneling current in ultra-thin oxide MOSFET's


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68944


    Title: Analysis of gate tunneling current in ultra-thin oxide MOSFET's
    Authors: Erdogan M.U.;Chang M.-C.;Bowen C.;Chatterjee A.;Seitchik J.;Shichijo H.
    教師: 張彌彰
    Date: 1998
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: 56th Annual Device Research Conference Digest, New York, NY, USA, 22-24 June 1998, Pages 14-15
    Keywords: MOSFET
    dielectric thin films
    electric current
    nanotechnology
    Abstract: As MOSFETs are scaled, the gate oxide thickness is becoming smaller and smaller. Gate tunneling current increases exponentially with decreasing oxide thickness. The sub-0.1 μm transistors will require oxides thinner than 30 Å. For such thin oxides, the tunneling current becomes significant. This current is expected to be important for the standby power and operation of circuits. Therefore, a simple analytical model for study of the effect of tunneling current would be very useful. This paper describes such a model and its applications
    Relation Link: http://www.ieee.org/portal/site
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/68944
    Appears in Collections:[電機工程學系] 會議論文

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