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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  An analytical model of short-channel effect for sub-100 nm MOSFET with graded junction and halo doped channel


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/69088


    Title: An analytical model of short-channel effect for sub-100 nm MOSFET with graded junction and halo doped channel
    Authors: Yimin Huang;Chenhsin Lien;Tan-Fu Lei
    教師: 連振炘
    Date: 2003
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: Semiconductor Device Research Symposium, 2003 International, 10-12 Dec. 2003, Pages 470 - 471
    Keywords: analytical channel
    sub-100 nm MOSFET with graded junction
    halo doped channel
    Abstract: In this paper the analytical channel potential solution and short-channel effect model are derived for sub-100 nm MOSFET with graded junction and halo doped channel. The dependence of the counter-doping due to graded source/drain junction is presented for the first time. Scale-length approach for solving 2D poisson's equation is extended to find the channel potential successfully. By this model, the lateral non-uniform channel devices can be reduced into uniform devices with shorter lengths. The effects of the halo and graded junction on short-channel MOSFET can be illustrated from the viewpoints of the distributed effective-doping concentration and the exponential roll-off behavior
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/69088
    Appears in Collections:[電機工程學系] 會議論文

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