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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  Low Power and High Speed Bipolar Switching with A Thin Reactive Ti Buffer Layer in Robust HfO2 Based RRAM


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/69094


    Title: Low Power and High Speed Bipolar Switching with A Thin Reactive Ti Buffer Layer in Robust HfO2 Based RRAM
    Authors: H.Y. Lee;P.S. Chen;T.Y. Wu;Y.S. Chen;C.C. Wang;P.J. Tzeng;C.H. Lin;F. Chen;C.H. Lien;M.J. Tsai
    教師: 連振炘
    Date: 2008
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: Electron Devices Meeting, 2008, IEDM 2008, IEEE International, 15-17 Dec. 2008, Pages 1 - 4
    Keywords: thin Ti layer
    reactive buffer layer
    switching speed
    Abstract: A novel HfO2-based resistive memory with the TiN electrodes is proposed and fully integrated with 0.18 μm CMOS technology. By using a thin Ti layer as the reactive buffer layer into the anodic side of capacitor-like memory cell, excellent memory performances, such as low operation current (down to 25 μA), high on/off resistance ratio (above 1,000), fast switching speed (5 ns), satisfactory switching endurance (>106 cycles), and reliable data retention (10 years extrapolation at 200°C) have been demonstrated in our memory device. Moreover, the benefits of high yield, robust memory performance at high temperature (200°C), excellent scalability, and multi-level operation promise its application in the next generation nonvolatile memory.
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/69094
    Appears in Collections:[電機工程學系] 會議論文

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