English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 14786124      Online Users : 48
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  Comprehensively study of read disturb immunity and optimal read scheme for high speed HfOx based RRAM with a Ti layer

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/69096

    Title: Comprehensively study of read disturb immunity and optimal read scheme for high speed HfOx based RRAM with a Ti layer
    Authors: Heng-Yuan Lee;Yu-Sheng Chen;Pang-Shiu Chen;Pei-Yi Gu;Yen-Ya Hsu;Wen-Hsin Liu;Wei-Su Chen;Chen Han Tsai;Frederick Chen;Chen-Hsin Lien
    教師: 連振炘
    Date: 2010
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: 2010 VLSI-TSA, Hsinchu, April 26-29, 2010, Pages 132 - 133
    Keywords: HfOx
    Abstract: Although a significant effort was made recently in the development of binary oxide based resistive memory (RRAM), reliability issue is still the most concern, but less addressed. By stressing the device in high resistance state (HRS) with constant voltage of the same bias polarity during SET process, the disturbed time is found to exhibit extreme low Weibull slope (~0.3). This characteristic can drastically shrink the reliability margin for reading process. Inserting a thin Al2O3 between the transition metal oxide and bottom electrode was proposed previously to improve read disturb immunity at room temperature. However, the effect of high temperature (125°C) on the read disturb of this stacked layer (HfOx/Al2O3) has not yet been studied. In this work, the degradation behavior of resistance state in the Ti/HfOx based resistive memory induced by constant voltage stress (CVS) is studied comprehensively. An improved reading scheme for the bipolar RRAM is proposed. For the requirement of high speed operation and robust read disturb for the HfO2 based resistive memory with a Ti layer, a new and optimal film stack sequence (HfO2/Ti) was fabricated. The memory performances of the new stacked layer with different Ti thickness are also presented.
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/69096
    Appears in Collections:[電機工程學系] 會議論文

    Files in This Item:

    File Description SizeFormat


    SFX Query


    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback