National Tsing Hua University Institutional Repository:Low Power and High Speed Bipolar Switching with A Thin Reactive Ti Layer in HfO2 Based RRAM
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    NTHUR > College of Electrical Engineering and Computer Science > Department of Electrical Engineering > EE Conference Papers >  Low Power and High Speed Bipolar Switching with A Thin Reactive Ti Layer in HfO2 Based RRAM


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/69104


    Title: Low Power and High Speed Bipolar Switching with A Thin Reactive Ti Layer in HfO2 Based RRAM
    Authors: C. H. Lien;H. Y. Lee;P. S. Chen;T. Y. Wu;Y. S. Chen;C. C. Wang;P. J. Tzeng;F. Chen;M.-J. Tsai
    Teacher: 連振炘
    Date: 2009
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: International Electron Devices and Materials Symposium, Taoyuan, Taiwan, Nov. 19-20, 2009
    Keywords: HfO2
    RRAM
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/69104
    Appears in Collections:[Department of Electrical Engineering] EE Conference Papers

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