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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  Impact of Process Variables on Channel Stress and Carrier Mobility for Strained-Si CMOS


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/69111


    Title: Impact of Process Variables on Channel Stress and Carrier Mobility for Strained-Si CMOS
    Authors: Chun-Hsing Shih;Chung-Shen Cheng;Ching-Chang Lin;Chenhsin Lien
    教師: 連振炘
    Date: 2006
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: International Electron Devices and Materials Symposium, Tainan, Taiwan, Dec. 7-8, 2006, Pages 373-374
    Keywords: Strained-Si
    CMOS
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/69111
    Appears in Collections:[電機工程學系] 會議論文

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