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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  A 10-Gbps In0.53Ga0.47As p-i-n photodiode receiver on metamorphic InGaP buffered GaAs substrate

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/69439

    Title: A 10-Gbps In0.53Ga0.47As p-i-n photodiode receiver on metamorphic InGaP buffered GaAs substrate
    Authors: Yu-Sheng Liao;Gong-Ru Lin;Hao-Chung Kuo;Kai-Ming Feng;Milton Feng
    教師: 馮開明
    Date: 2006
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006, 21-26 May 2006, Pages 1 - 2
    Keywords: In0.53Ga0.47As-InxGa1-xP-GaAs
    time 41 ps
    optical receiver
    ultra-low dark current
    p-i-n photodiode receiver
    metamorphic buffer layer
    Abstract: In0.53Ga0.47As p-i-n photodiode based OC-192 receiver grown on linearly graded metamorphic InxGa1-xP buffered GaAs with ultra-low dark current of 3.6 fA/μm2, switching response of 41 ps, bit-error-rate of 10-12, and sensitivity of -19 dBm are reported.
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/69439
    Appears in Collections:[電機工程學系] 會議論文

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