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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  Ion Implanted Grating-Type Si Solar Cells: Junction Depth Dependence


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/69794


    Title: Ion Implanted Grating-Type Si Solar Cells: Junction Depth Dependence
    Authors: H.L. Hwang;D.C. Liu;R.S. Tang;Y.R. Kao;J.J. Loferski
    教師: 黃惠良
    Date: 1980
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: Fourteenth IEEE Photovoltaic Specialists Conference 1980, San Diego, CA, USA , Jan 7-10 1980, Pages 381-385
    Keywords: junction depth
    charge collection barriers
    ion implantation
    Abstract: Silicon grating-type solar cells in which the light receiving surface is covered by a finely spaced grating of charge collection barriers were fabricated by ion implantation. The as-fabricated cells exhibited Voc of 0.54 V, Isc(AM1) of 32 mA/cm2 (without AR coating), a fill factor of 0.68 and a conversion efficiency of 11%. It was found that annealing at 1100°C for a few minutes followed by a slow cooling rate was required to obtain optimized performance. For a fixed grating geometry deep junctions resulted in better cells than shallow junctions within the boron implants. The author describes the results of numerical simulation in which alternating direction implicit methods were employed to obtain the collection efficiencies of grating cells with varying junction depths. The computed AM1 I-V characteristics of grating Si cells are also described
    Relation Link: http://adsabs.harvard.edu/abs/1980pvsp.conf..381H
    http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/69794
    Appears in Collections:[電機工程學系] 會議論文

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