National Tsing Hua University Institutional Repository:Deposition of Hydrogenated Si Films by Hydrogenation of the SiO2 Surface and Hydrogen Dilution with PE-CVD and ECR-CVD
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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  Deposition of Hydrogenated Si Films by Hydrogenation of the SiO2 Surface and Hydrogen Dilution with PE-CVD and ECR-CVD


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    题名: Deposition of Hydrogenated Si Films by Hydrogenation of the SiO2 Surface and Hydrogen Dilution with PE-CVD and ECR-CVD
    作者: K.C.Wang;T.R. Yew;H.L. Hwang
    教師: 黃惠良
    日期: 1994
    出版者: Materials Research Society
    關聯: Flat Panel Display Materials. Symposium, San Francisco, CA, USA, April 5-6 1994, Pages 117-122
    关键词: hydrogenated Si film deposition
    SiO2 surface hydrogenation
    hydrogen dilution
    摘要: This paper presents the results of low temperature deposition of poly-Si films deposited on SiO2 layers. Hydrogen dilution, hydrogen atom treatment, and hydrogenation of the SiO2 surface steps were applied to deposit the Si films. The above treatment steps were usually used in plasma enhanced chemical vapor deposition, and they were extended to be used in electron cyclotron resonance chemical vapor deposition to identify the grain growth effects. The nucleation and microstructure of the silicon films were observed by cross-section transmission electron microscopy
    相関连結: http://www.mrs.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/69826
    显示于类别:[電機工程學系] 會議論文

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