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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  AFM/TEM Investigation of Low Temperature Polycrystalline Silicon Grown by ECR-CVD


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/69827


    Title: AFM/TEM Investigation of Low Temperature Polycrystalline Silicon Grown by ECR-CVD
    Authors: K.C. Wang;K.C. Hsu;H.L.Hwang
    教師: 黃惠良
    Date: 1996
    Publisher: Materials Research Society
    Relation: Diagnostic Techniques for Semiconductor Materials Processing II. Symposium, Boston, MA, USA, Nov 27-30 1995, Pages 195-200
    Keywords: low temperature polysilicon
    polycrystalline films
    ECR-CVD
    Abstract: The polycrystalline silicon films were deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD) with hydrogen dilution at 250°C and without any thermal annealing. The surface morphology and the microstructure of the poly-Si films are investigated by atomic force microscopy (AFM), plan-view transmission electron microscopy (TEM), cross-sectional TEM and high resolution TEM (HRTEM). The low temperature poly-Si films deposited by ECR-CVD show a special leaf-like grain shape (plan-view) and an upside-down cone shape (3-dimensional view). The grains in the poly-Si films have preferred orientation of 〈112〉 and the longer side of the leaf-like grain is 〈111¯〉 direction and the shorter side is 〈22¯0〉 direction. Lattice bending and interruption are found in the films. The arrangement of the atoms on the grains are well ordered, while atoms in the interfacial regions are randomly distributed. A simple grain formation model based on growth rate differences between different planes and etching effect can explain the film growth mechanism and the formation of the special grain geometry
    Relation Link: http://www.mrs.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/69827
    Appears in Collections:[電機工程學系] 會議論文

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