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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 會議論文  >  Growth and characteristics of high optical quality lattice matched GaInAsP layers and GaInAsP/GaInAs quantum wells on InP by MBE using solid phosphorus and arsenic valved cracking cells


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/70593


    Title: Growth and characteristics of high optical quality lattice matched GaInAsP layers and GaInAsP/GaInAs quantum wells on InP by MBE using solid phosphorus and arsenic valved cracking cells
    Authors: J. N. Baillargeon;A. Y. Cho;F. A. Thiel;P. J. Pearah;K. Y. Cheng
    教師: 鄭克勇
    Date: 1994
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: Proc. of 1994 Int. Symp.Compound Semicond., (Inst. Phys. Sr. 141), San Diego, CA, USA, 18-22 Sept. 1994, Pages 173-176
    Keywords: arsenic valved cracking cells
    phosphorus
    quantum
    MBE
    GaInAsP/GaInAs
    GaInAsP
    lattice
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/70593
    Appears in Collections:[電機工程學系] 會議論文

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