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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Novel Self-Aligned Nitride One Time Programming with 2-bit/Cell Based on Pure 90-nm Complementary Metal-Oxide-Semiconductor Logic Technology


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71014


    Title: Novel Self-Aligned Nitride One Time Programming with 2-bit/Cell Based on Pure 90-nm Complementary Metal-Oxide-Semiconductor Logic Technology
    Authors: Lai HC;Huang CE;King YC;Lin CJ
    教師: 林崇榮
    Date: 2008
    Publisher: Japan Society of Applied Physics
    Relation: Japanese Journal of Applied Physics, Japan Society of Applied Physics, Volume 47, Issue 11, NOV 2008, Pages 8369-8374
    Keywords: Nitride
    Metal-Oxide-Semiconductor
    Abstract: A novel 2-bit/cell one time programming (OTP) cell with a nitride-based storage node was developed for programmable logic applications. The fully-logic-compatible cell was successfully demonstrated using 90-nm complementary metal-oxide-semiconductor (CMOS) technology with a cell size of 0.358 μm2. This cell adopting source-side injection (SSI) programming scheme has a very large on/off window and superior writing efficiency. The self-aligned nitride storage node exhibits excellent data retention even at a logic gate oxide thickness of less than 2 nm. This new cell supports a promising solution for logic non-volatile memory (NVM) beyond the 90-nm node.
    Relation Link: http://www.jsap.or.jp/english/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71014
    Appears in Collections:[電機工程學系] 期刊論文

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