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    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71023


    Title: A New Ultra Low Voltage SRO NAND Cell
    Authors: Chrong-Jung Lin;Charles Ching-Hsiang Hsu;Hwi-Huang Chen;Gary Hong
    教師: 林崇榮
    Date: 1997
    Publisher: Japan Society of Applied Physics
    Relation: Japanese Journal of Applied Physics, Japan Society of Applied Physics, Volume 36, 1997, Pages 1030-1034
    Keywords: Voltage
    SRO
    NAND
    Abstract: Thin silicon-rich-oxide (SRO) film can be an efficient and reliable tunneling injector for the low voltage application in Flash memory cell. To date, no work has been done on the quantitative and microscopical tunneling model for the SRO enhancement behavior. Moreover, no complete investigation on array-level SRO Flash cell have been presented. In this paper, a new low voltage SNAND (SRO NAND) cell is proposed and investigated, especially in term of performance characteristics and reliability issues. Furthermore, a two-dimensional microscopical model for SRO tunneling characteristics is developed to quantitatively explain the tunneling enhancement characteristics for SRO Flash memory cell. Results show that the tunneling model agrees well with the tunneling characteristics of SNAND cell and also provided the insight into tunnel oxide scaling in SNAND cell operation. The erase and program voltage can be reduced from 22 V to 7 V and 12 V with improved erase speed up to 2 orders, respectively. More than 10^5 endurance cycles are achieved. The feasibility of the SNAND cell is demonstrated.
    Relation Link: http://www.jsap.or.jp/english/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71023
    Appears in Collections:[電機工程學系] 期刊論文

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