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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  High-performance polycrystalline silicon thin-film transistors with oxide nitride-oxide gate dielectric and multiple nanowire channels


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71076


    Title: High-performance polycrystalline silicon thin-film transistors with oxide nitride-oxide gate dielectric and multiple nanowire channels
    Authors: Chen, Shih-Ching;Chang, Ting-Chang;Liu, Po-Tsun;Wu, Y. C.;Tsai, C. C.;Chang, T.S.;Lien, Chen-Hsin
    教師: 連振炘
    Date: 2006
    Publisher: Elsevier
    Relation: Thin Solid Films, Elsevier, Volume 515, Issue 3, Nov 2006, Pages 1112-1116
    Keywords: poly-Si TFTs
    oxide-nitride-oxide
    nanowire
    Abstract: This work presents a method to enhance the performance of polycrystalline silicon thin film transistors (poly-Si TFTs) by using an oxide-nitride-oxide (ONO) gate dielectric and the multiple nanowire channels structure. Experimental results indicate that the performance of the device was enhanced by using the ONO multilayer, because the ONO gate dielectric constant is increased compared to the conventional oxide gate dielectric. Additionally, the TFTs with a ten nanowire channel structure (NW-TFTs) have superior electrical characteristics compared to other TFTs. This is because a structure with more corners and a shorter radius has better gate control due to the corner effect. (c) 2006 Elsevier B.V. All rights reserved.
    Relation Link: http://www.elsevier.com/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71076
    Appears in Collections:[電機工程學系] 期刊論文

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