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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Growth of 3C-SiC on Si(111) using the four-step non-cooling process

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71079

    Title: Growth of 3C-SiC on Si(111) using the four-step non-cooling process
    Authors: Jui-Min Liu;Wei-Yu Chen;Jenn-Chang Hwang;Chih-Fang Huang;Wei-Lin Wang;Li Chang
    教師: 黃智方
    Date: 2010
    Publisher: Elsevier
    Relation: Thin Solid Films, Elsevier, Volume 518, 2010, Pages 5700-5703
    Keywords: Silicon carbide
    Low pressure chemical vapor deposition
    X-ray diffraction
    Crystal microstructure
    Abstract: A modified four-step method was applied to grow a 3C–SiC thin film of high quality on the off-axis 1.5° Si(111) substrate in a mixed gas of C3H8, SiH4 and H2 using low pressure chemical vapor deposition. The modified four-step method adds a diffusion step after the carburization step and removes the cooling from the traditional three-step method (clean, carburization, and growth). The X-ray intensity of the 3C–SiC(111) peak is enhanced from 5 × 104 counts/s (the modified three steps) to 1.1 × 105 counts/s (the modified four steps). The better crystal quality of 3C–SiC is confirmed by the X-ray rocking curves of 3C–SiC(111). 3C–SiC is epitaxially grown on Si(111) supported by the selected area electron diffraction patterns taken at the 3C–SiC/Si(111) interface. Some {111} stacking faults and twins appear inside the 3C–SiC, which may result from the stress induced in the 3C–SiC thin film due to lattice mismatch. The diffusion step plays roles in enhancing the formation of Si–C bonds and in reducing the void density at the 3C–SiC/Si(111) interface.
    Relation Link: http://www.elsevier.com/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71079
    Appears in Collections:[電機工程學系] 期刊論文

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