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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Crystal Quality of 3C-SiC Influenced by the Diffusion Step in the Modified Four-Step Method


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71087


    Title: Crystal Quality of 3C-SiC Influenced by the Diffusion Step in the Modified Four-Step Method
    Authors: Wei-Yu Chen;Wei-Lin Wang;Jui-Min Liu;Chien-Cheng Chen;Jenn-Chang Hwang;Chih-Fang Huang;Li Chang
    教師: 黃智方
    Date: 2010
    Publisher: Electrochemical Society
    Relation: Journal of The Electrochemical Society, Electrochemical Society, Volume 157, Issue 3, 2010, Pages H377-380
    Keywords: bonds (chemical)
    diffusion
    silicon compounds
    stacking faults
    transmission electron microscopy
    twin boundaries
    wide band gap semiconductors
    Abstract: The atomic arrangement and bonding characteristics of void-free 3C-SiC/Si(100) grown by the modified four-step method are presented. Without the diffusion step, Si–C bonds are partially formed in the as-carburized layer on Si(100). The ratio of C–C bonds to Si–C bonds is about 7:3, which can be lowered to about 1:9 after the diffusion step at 1350°C for 5 min or at 1300°C for 7 min according to C 1s core level spectra. The residual C–C bonds cannot be removed, which is associated with an irregular atomic arrangement (amorphous) located either at the 3C-SiC/Si(100) interface or at the intersection of twin boundaries in the 3C-SiC buffer layer based on the lattice image taken by transmission electron microscope. The diffusion step helps the formation of Si–C bonds more completely and results in a SiC buffer layer of high quality formed on Si(100) before the growth step. However, twins and stacking faults still appear in the 3C-SiC buffer layer after the diffusion step. The formation mechanism of the 3C-SiC buffer layer is proposed and discussed.
    Relation Link: http://www.electrochem.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71087
    Appears in Collections:[電機工程學系] 期刊論文

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