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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Square-Gate AlGaN/GaN HEMTs with Improved Trap-Related Characteristics


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71102


    Title: Square-Gate AlGaN/GaN HEMTs with Improved Trap-Related Characteristics
    Authors: Yu-Syuan Lin;Jia-Yi Wu;Chih-Yuan Chan;Shawn S. H. Hsu;Chih-Fang Huang;Ting-Chi Lee
    教師: 黃智方
    Date: 2009
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: IEEE Transactionson Electron Devices, Institute of Electrical and Electronics Engineers, Volume 52, Issue 12, 2009, Pages 3207-3211
    Keywords: Square-Gate
    HEMTs
    Abstract: In this brief, the trap-related characteristics of high-breakdown AlGaN/GaN high-electron-mobility transistors (HEMTs) were investigated. Compared with a conventional multifinger layout, the square-gate design presented reduced the current collapse from 19% to 6% and almost eliminated the gate lag. The flicker noise density and the gate leakage decreased from 1.16 times10-10 to 1.17 times10-11 1/Hz (f = 100 Hz) and from 7.36 times10-5 to 1.80 times10-6 A/mm ( V GS = -4 V and V DS = 100 V), respectively. The breakdown voltage was also improved from 350 to 650 V. With the channel area away from the defects generated by the mesa etching process, the square-gate AlGaN/GaN HEMTs demonstrated excellent performance with much less trapping effects.
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71102
    Appears in Collections:[電機工程學系] 期刊論文

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