National Tsing Hua University Institutional Repository:Square-Gate AlGaN/GaN HEMTs with Improved Trap-Related Characteristics
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    NTHUR > College of Electrical Engineering and Computer Science > Department of Electrical Engineering > EE Journal / Magazine Articles  >  Square-Gate AlGaN/GaN HEMTs with Improved Trap-Related Characteristics

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    Title: Square-Gate AlGaN/GaN HEMTs with Improved Trap-Related Characteristics
    Authors: Yu-Syuan Lin;Jia-Yi Wu;Chih-Yuan Chan;Shawn S. H. Hsu;Chih-Fang Huang;Ting-Chi Lee
    Teacher: 黃智方
    Date: 2009
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: IEEE Transactionson Electron Devices, Institute of Electrical and Electronics Engineers, Volume 52, Issue 12, 2009, Pages 3207-3211
    Keywords: Square-Gate
    Abstract: In this brief, the trap-related characteristics of high-breakdown AlGaN/GaN high-electron-mobility transistors (HEMTs) were investigated. Compared with a conventional multifinger layout, the square-gate design presented reduced the current collapse from 19% to 6% and almost eliminated the gate lag. The flicker noise density and the gate leakage decreased from 1.16 times10-10 to 1.17 times10-11 1/Hz (f = 100 Hz) and from 7.36 times10-5 to 1.80 times10-6 A/mm ( V GS = -4 V and V DS = 100 V), respectively. The breakdown voltage was also improved from 350 to 650 V. With the channel area away from the defects generated by the mesa etching process, the square-gate AlGaN/GaN HEMTs demonstrated excellent performance with much less trapping effects.
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