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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Growth of 3C-SiC on Si(100) by Low Pressure Chemical Vapor Deposition Using a Modified Four-Step Process

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71111

    Title: Growth of 3C-SiC on Si(100) by Low Pressure Chemical Vapor Deposition Using a Modified Four-Step Process
    Authors: W.-Y. Chen;C. C. Chen;J. Hwang;C. F. Huang
    教師: 黃智方
    Date: 2009
    Publisher: American Chemical Society
    Relation: Crystal Growth & Design, American Chemical Society, Volume 9, Issue 6, 2009, Pages 2616-2619
    Keywords: 3C-SiC
    Abstract: A modified four-step method has been developed to grow a void-free 3C-SiC film of high quality on Si(100) in a mixed gas of SiH4−C3H8−H2 using low pressure chemical vapor deposition. A diffusion step was added after the carburization step in the traditional three-step method (clean, carburization, growth), and no cooling between each step was required. X-ray photoemission C 1s spectra support that the formation of SiC bonds can be greatly improved in the as-carburized Si(100) surface after diffusion at 1350 °C for 300 s. A thick 3C-SiC film of good crystal quality was grown on the as-diffused SiC layer during the growth step, confirmed by both X-ray diffraction and electron diffraction data. Hall effect measurements were used to characterize the electrical properties of SiC films. All the SiC films are n-type. The Hall mobility and carrier concentration of a SiC film of 1.5 μm thick increase from 320 to 395 cm2/(V s) and from 1.6 × 1017 cm−3 to 2.7 × 1017 cm−3, respectively, when the diffusion step is added.
    Relation Link: http://pubs.acs.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71111
    Appears in Collections:[電機工程學系] 期刊論文

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