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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  A novel 2-bit/cell p-channel logic programmable cell with pure 90-nm CMOS technology


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71401


    Title: A novel 2-bit/cell p-channel logic programmable cell with pure 90-nm CMOS technology
    Authors: Chen YJ;Huang CE;Chen HM;King YC
    教師: 金雅琴
    Date: 2008
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: IEEE ELECTRON DEVICE LETTERS, Institute of Electrical and Electronics Engineers, Volume 29, Issue 8, AUG 2008, Pages 938-940
    Keywords: p-channel
    CMOS
    Abstract: A new p-channel nitride-based one-time programmable (OTP) memory was developed for advanced-logic nonvolatile-memory (NVM) applications. A 0.296-mum2/bit (~35 F2) OTP cell, i.e., 0.592 mum2/cell, with a self-aligned nitride storage node was fabricated using standard 90-nm CMOS processes and is fully independent of gate oxide for high scwww.lw20.comalability. Additionally, the ultrahigh-density OTP cell exhibits excellent retention, immunity against disturbance, and a wide on/off window under the band-to-band hot electron programming. In summary, the new p-channel OTP cell is a very promising solution for use in high-density logic NVM applications beyond the 90-nm technology node.
    知来论文 www.lw20.com
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71401
    Appears in Collections:[電機工程學系] 期刊論文

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