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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Growth and characterization of Ga0.65In0.35P orange light-emitting diodes by metalorganic vapor phase epitaxy


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71584


    Title: Growth and characterization of Ga0.65In0.35P orange light-emitting diodes by metalorganic vapor phase epitaxy
    Authors: LIN JF;WU MC;JOU MJ;CHANG CM;CHEN CY;LEE BJ
    教師: 吳孟奇
    Date: 1993
    Publisher: American Institute of Physics
    Relation: JOURNAL OF APPLIED PHYSICS, American Institute of Physics, Volume 74,   Issue 3, AUG 1 1993, Pages 1781-1786
    Keywords: VISIBLE LASER-DIODES
    BAND-GAP ENERGY
    TEMPERATURE OPERATION
    ACTIVE-LAYER
    GA0.5IN0.5P
    DEPOSITION
    IN1-XGAXP
    MOVPE
    LUMINESCENCE
    MECHANISM
    Abstract: p-n Ga0.65In0.35P homostructure light-emitting diodes grown on GaAs0.7P0.3 substrates have been fabricated by low-pressure metalorganic vapor-phase epitaxy. The growth and characterization of undoped, Si-, and Zn-doped layers are described in detail. The optimum growth condition to grow the high-quality Ga0.65In0.35P epitaxial layers is at the growth temperatures of 700-740-degrees-C and V/III ratios of 100-200. The strongest photoluminescence peak intensity occurs at 2 x 10(18) and 7 x 10(17) cm-3 for electron and hole concentrations, respectively. Diodes fabricated from the p-n homostructure are characterized by current-voltage measurement, electroluminescence, and external quantum efficiency. A forward-bias turn-on voltage of 1.68 V with an ideality factor of 2.5 and a breakdown voltage of 9 V are obtained from the current-voltage measurements. The emission peak wavelength and full width at half-maximum of electroluminescence are around 610 nm and 79 meV at 20 mA. The external quantum efficiency of the uncoated diode is about 0.015%.
    Relation Link: http://www.aip.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71584
    Appears in Collections:[電機工程學系] 期刊論文

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