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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  1.3 μm InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP/InP/InGaP active region

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71728

    Title: 1.3 μm InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP/InP/InGaP active region
    Authors: Lei PH;Wu MY;Wu MC;Lee CY;Ho WJ;Lin CC
    教師: 吳孟奇
    Date: 2002
    Publisher: American Vacuum Society
    Relation: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, American Vacuum Society, Volume 20,   Issue 3, MAY-JUN 2002, Pages 1013-1018
    Abstract: In this article, we report the fabrication and analysis of 1.3 mum InAsP multiquantum well laser diodes (MQW LDs) with the n-type modulation-doped (MD) InAsP/InP/InGaP active region grown by metalorganic chemical vapor deposition. We theoretically analyze the threshold current density, differential quantum efficiency, internal quantum efficiency, and internal optical loss as a function of thickness and doping concentration of n-type Si-doped InGaP barrier and InP intermediate layer for the 1.3 mum MD-MQW LDs. The optimum thickness is 2 nm for the n-type doped barrier and 6.2 nm for the doped intermediate layer while remaining 4.4-nm-thick undoped in the InP intermediate layer to prevent from lateral diffusion of Si-doped atoms into the InAsP well. Besides, the optimum doping concentration of doped InGaP barrier and doped InP intermediate layer is 1 x 10(18) cm(-3). With these optimum conditions, the LDs will reduce the threshold current density and threshold gain to 0.8 kA/cm(2) and 43.08 cm(-1) as compared to those of 1.6 kA/cm(2) and 44.1 cm(-1) for the undoped active region, respectively. (C) 2002 American Vacuum Society.
    Relation Link: http://www.avs.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71728
    Appears in Collections:[電機工程學系] 期刊論文

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