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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Characterization of ultrathin dielectrics grown by microwave afterglow oxygen and N2O plasma

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71734

    Title: Characterization of ultrathin dielectrics grown by microwave afterglow oxygen and N2O plasma
    Authors: Po-Ching Chen;Hsu, K.Y.-J.;Jian-Yang Lin;Huey-Liang Hwang
    教師: 徐永珍
    Date: 1995
    Publisher: Japan Society of Applied Physics
    Relation: Japanese Journal of Applied Physics, Part 1 (Regular Papers & Short Notes), Japan Society of Applied Physics, Volume 34, Issue 2B, Feb. 1995, Pages 973-7
    Keywords: Ultrathin dielectrics
    microwave afterglow
    dielectric thin films
    Abstract: Ultrathin dielectrics, oxides and oxynitrides were grown using microwave afterglow oxygen and N2O plasma at low temperature. N2O plasma annealing and pretreatment improved the breakdown properties of O2 plasma oxides. From secondary ion mass spectroscopy (SIMS) analysis, nitrogen was found to be incorporated into oxides effectively by this low-temperature method. Nitrogen content was highest at the oxide surface and decreased toward the oxide/Si interface. This indicates a nitridation mechanism different from the conventional N2O gas annealing or oxidation processes. The relationships among interface state densities, tunneling current and nitrogen profiles were also investigated by C-V and I-V measurements
    Relation Link: http://www.jsap.or.jp/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71734
    Appears in Collections:[電機工程學系] 期刊論文

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