English  |  正體中文  |  简体中文  |  Items with full text/Total items : 54367/62174 (87%)
Visitors : 15204794      Online Users : 162
RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTHU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  A 10.5 Gb/s transimpedance amplifier using capacitive emitter degeneration technique

    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71766

    Title: A 10.5 Gb/s transimpedance amplifier using capacitive emitter degeneration technique
    Authors: Huang, Ji-Chen;Lai,Kuang-Sheng;Hsu,Klaus Y.J.
    教師: 徐永珍
    Date: 2009
    Publisher: Elsevier
    Relation: Solid-State Electronics, Elsevier, Volume 53, Issue 8, August 2009, Pages 916-919
    Keywords: transimpedance amplifier
    capacitive emitter degeneration technique
    Abstract: A 10.5 Gb/s modified shunt-feedback transimpedance amplifier in a commercial 0.35 μm SiGe BiCMOS technology is presented. A capacitive emitter degeneration technique was used to improve the bandwidth performance of the transimpedance amplifier. It achieved a transimpedance gain of 56 dB Ω, a −3 dB bandwidth of 6.2 GHz with a 0.4 pF input parasitic capacitance value, and a noise current spectral density of View the MathML source. The total circuit dissipates 29 mW under a 3.3 V supply, and the chip size is only 0.25 × 0.165 mm2.
    Relation Link: http://www.elsevier.com/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71766
    Appears in Collections:[電機工程學系] 期刊論文

    Files in This Item:

    File Description SizeFormat


    SFX Query


    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback