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    NTHUR > College of Electrical Engineering and Computer Science > Department of Electrical Engineering > EE Journal / Magazine Articles  >  AlGaN/GaN HEMTs with low leakage current and high on/off current ratio

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    Title: AlGaN/GaN HEMTs with low leakage current and high on/off current ratio
    Authors: Y. Lin;Y. Lian;S. Hsu
    Teacher: 徐碩鴻
    Date: 2010
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: Electron Device Letters, IEEE, Institute of Electrical and Electronics Engineers, Volume 31, Issue 2, Feb. 2010, Pages 102 - 104
    Keywords: Flicker noise
    leakage current
    Abstract: In this letter, we propose using an oxide-filled isolation structure followed by N2/H2 postgate annealing to reduce the leakage current in AlGaN/GaN HEMTs. An OFF-state drain leakage current that is smaller than 10−9 A/mm (minimum 5.1 × 10−10 A/mm) can be achieved, and a gate leakage current in the range of 7.8 × 10−10 to 9.2 × 10−11 A/mm (VGS from −10 to 0 V and VDS = 10 V) is obtained. The substantially reduced leakage current results in an excellent ON/OFF current ratio that is up to 1.5 × 108. An improved flicker noise characteristic is also observed in the oxide-filled devices compared with that in the traditional mesa-isolated GaN HEMTs.
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