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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  A wideband low noise amplifier with 4 kV HBM ESD protection in 65 nm RF CMOS


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71820


    Title: A wideband low noise amplifier with 4 kV HBM ESD protection in 65 nm RF CMOS
    Authors: M. Tsai;S. Hsu;F. Hsueh;C. Jou;S. Chen;M. Song
    教師: 徐碩鴻
    Date: 2009
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: IEEE Microwave and Wireless Component Letters, Institute of Electrical and Electronics Engineers, Volume 19, Issue 11, Nov. 2009, Pages 734-736
    Keywords: amplifier
    HBM
    ESD
    RF
    CMOS
    Abstract: This study presents a wideband low noise amplifier (LNA) including electrostatic discharge (ESD) protection circuits using 65 nm CMOS with a gate oxide thickness of only ~ 2 nm. By co-designing the ESD blocks with the core circuit, the LNA shows almost no performance degradation compared to the reference design without ESD. Under a power consumption of only 6.8 mW, the silicon results show that the LNA can achieve a peak power gain of 13.8 dB. Within the 3 dB bandwidth from 2.6 GHz to 6.6 GHz, the noise figure (NF) is in a range of 4.0 dB to 6.5 dB and the input reflection coefficient S 11 is below -13.0 dB. Using the miniaturized Shallow-Trench-Isolation (STI) diode of ~ 40 fF capacitance and a robust gate-driven power clamp configuration, the proposed LNA demonstrates an excellent 4 kV human body mode (HBM) ESD performance, which has the highest voltage/capacitance ratio ( ~ 100 V/fF) among the published results for RF LNA applications.
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71820
    Appears in Collections:[電機工程學系] 期刊論文

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