National Tsing Hua University Institutional Repository:Square-gate AlGaN/GaN HEMTs with improved trap-related characteristics
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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Square-gate AlGaN/GaN HEMTs with improved trap-related characteristics


    题名: Square-gate AlGaN/GaN HEMTs with improved trap-related characteristics
    作者: Y. Lin;J. Wu;C. Chan;S. Hsu;C. Huang;T. Lee
    教師: 徐碩鴻
    日期: 2009
    出版者: Institute of Electrical and Electronics Engineers
    關聯: IEEE Trans. Electron Devices, Institute of Electrical and Electronics Engineers, Volume 56, Issue 12, Dec. 2009, Pages 3207-3211
    关键词: HEMTs
    摘要: In this brief, the trap-related characteristics of high-breakdown AlGaN/GaN high-electron-mobility transistors (HEMTs) were investigated. Compared with a conventional multifinger layout, the square-gate design presented reduced the current collapse from 19% to 6% and almost eliminated the gate lag. The flicker noise density and the gate leakage decreased from 1.16 times10-10 to 1.17 times10-11 1/Hz (f = 100 Hz) and from 7.36 times10-5 to 1.80 times10-6 A/mm ( V GS = -4 V and V DS = 100 V), respectively. The breakdown voltage was also improved from 350 to 650 V. With the channel area away from the defects generated by the mesa etching process, the square-gate AlGaN/GaN HEMTs demonstrated excellent performance with much less trapping effects.
    显示于类别:[電機工程學系] 期刊論文


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