In this paper, we report that low-density InAs/GaAs quantum dots (QDs) can be formed by postgrowth annealing the samples with 1.5-monolayer (ML) InAs coverage, which is thinner than the critical layer thickness for the Stranski-Krastanov growth. The annealing procedure was performed immediately after the deposition of the InAs layer. The effects of annealing time and annealing temperature on the dot density, dot size, and optical characteristics of the QDs were investigated. The optimum annealing conditions to obtain low-density QDs are longer than 60 s and higher than 500 degrees C. Meanwhile, no luminescence can be observed for the wetting-layer, which may suggest that the postgrowth annealing will make the wetting layer thinner and thus reduce the effects of wetting layer on carrier relaxation and recombination. On the other hand, we observe that a decrease of the PL intensity at the annealing conditions of 60 s and 515 degrees C, which is possibly due to the increasing surface dislocations resulted from the In adatom desorption at higher annealing temperature.