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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Realization of ambipolar pentacene thin film transistors through dual interfacial engineering


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71899


    Title: Realization of ambipolar pentacene thin film transistors through dual interfacial engineering
    Authors: Yang CY;Cheng SS;Ou CW;Chuang YC;Wu MC;Dhananjay;Chu CW
    教師: 吳孟奇
    Date: 2008
    Publisher: American Institute of Physics
    Relation: JOURNAL OF APPLIED PHYSICS, American Institute of Physics, Volume 103,   Issue 9, MAY 1 2008
    Keywords: FIELD-EFFECT TRANSISTORS
    INVERTERS
    CIRCUITS
    Abstract: Ambipolar conduction of a pentacene-based field-effect transistor can be attributed to dual interface engineering, which occurs at the dielectric/semiconductor interface and electrode/semiconductor interface. While the former was realized by utilizing a hydroxyl-free gate dielectric, the latter was made feasible by the use of appropriate metal source and drain electrodes. The field-effect hole and electron mobilities of 0.026 and 0.0023 cm(2)/V s, respectively, were extracted from the transfer characteristics of pentacene organic field-effect transistors utilizing polymethyl methacrylate as the trap-reduction interfacial modified layer and Al as the source and drain (S/D) electrodes. We demonstrated a complementarylike inverter by using two identical ambipolar transistors and it can be operated both in the first and third quadrants with a high output voltage gain of around 10. (C) 2008 American Institute of Physics.
    Relation Link: http://www.aip.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71899
    Appears in Collections:[電機工程學系] 期刊論文

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