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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  10-Gb/s operation of an In0.53 Ga0.47 As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate


    Please use this identifier to cite or link to this item: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71902


    Title: 10-Gb/s operation of an In0.53 Ga0.47 As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate
    Authors: Liao, Yu-Sheng;Lin, Gong-Ru;Kuo, Hao-Chung;Feng, Kai-Ming;Feng, Milton
    教師: 馮開明
    Date: 2006
    Publisher: Institute of Electrical and Electronics Engineers
    Relation: Photonics Technology Letters, IEEE, Volume 18, Issue 17, Sept. 2006, Pages 1822 - 1824
    Keywords: Photodiodes
    Semiconducting gallium arsenide
    Semiconducting indium compounds
    Substrates
    Amplification
    Abstract: The SONET OC-192 receiving performance of In0.53 Ga0.47As p-i-n photodiode grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate is reported. With a low-cost TO-46 package, such a device exhibits a frequency bandwidth up to 8 GHz, a bit-error rate (BER) of 10-9 at 10 Gb/s, a sensitivity of -17.8 dBm, and a noise equivalent power of 3.4 × 10-15 W/Hz1/2 owing to its ultralow dark current of 3.6 × 10-7 A/cm2. Eye diagram analysis at 10 Gb/s without transimpedance amplification reveals a statistically distributed Q-factor of 8.21, corresponding to a minimum BER of 1.1 × 10-16 at receiving power of -6 dBm.
    Relation Link: http://www.ieee.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71902
    Appears in Collections:[電機工程學系] 期刊論文

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