National Tsing Hua University Institutional Repository:Metallic wafer bonding for the fabrication of long-wavelength vertical-cavity surface-emitting lasers
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    National Tsing Hua University Institutional Repository > 電機資訊學院 > 電機工程學系 > 期刊論文 >  Metallic wafer bonding for the fabrication of long-wavelength vertical-cavity surface-emitting lasers


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    题名: Metallic wafer bonding for the fabrication of long-wavelength vertical-cavity surface-emitting lasers
    作者: H.C. Lin;K.L. Chang;K. C. Hsieh;W. H. Wang;K. Y. Cheng
    教師: 鄭克勇
    日期: 2002
    出版者: American Institute of Physics
    關聯: Journal of Applied Physics, American Institute of Physics, Volume 92, Issue 7, Oct 2002, Pages 4132-4134
    关键词: reflectivity
    surface topography
    atomic force microscopy
    annealing
    transmission electron microscopy
    distributed Bragg reflector lasers
    surface emitting lasers
    III-V semiconductors
    gallium arsenide
    indium compounds
    semiconductor-metal boundaries
    surface treatment
    wafer bonding
    chromium alloys
    gold alloys
    germanium alloys
    nickel alloys
    摘要: A novel metallic bonding method using AuGeNiCr as the bonding medium was developed for the fabrication of long-wavelength vertical-cavity surface-emitting lasers (VCSELs). The metallic bonding process can be performed at a low temperature of 320 °C within 1 h and it does not require chemical-mechanical polishing or etching treatments on the bonding surfaces. As determined by atomic force microscopy, the process can tolerate a surface roughness of ∼10 nm on the surface of bonding samples. Cross-sectional transmission electron microscopy shows that the bonding interface is smooth and damage-free. Using this bonding technique, a 1.55 μm GaInAsP/InP VCSEL structure with Al-oxide/Si distributed Bragg reflectors was demonstrated on a Si substrate. No degradation was found on the bonded VCSEL structure after annealing at 420 °C. The reflectivity and resonance measured from the bonded VCSEL cavity confirmed the high optical quality provided by this bonding process for device fabrication.
    相関连結: http://www.aip.org/
    URI: http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71942
    显示于类别:[電機工程學系] 期刊論文

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